Packaged semiconductor devices, methods of packaging semiconductor devices, and PoP devices

ABSTRACT

Packaged semiconductor devices, methods of packaging semiconductor devices, and package-on-package (PoP) devices are disclosed. In some embodiments, a method of packaging a semiconductor device includes forming through-package vias (TPVs) over a carrier, and coupling a semiconductor device to the carrier. The semiconductor device includes contact pads disposed on a surface thereof and an insulating material disposed over the contact pads. A molding material is formed over the carrier between the TPVs and the semiconductor device. Openings are formed in the insulating material using a laser drilling process over the contact pads, and a redistribution layer (RDL) is formed over the insulating material and the openings in the insulating material. A portion of the RDL is coupled to a top surface of each of the contact pads.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation application and claims the benefit ofU.S. patent application Ser. No. 14/531,916, filed Nov. 3, 2014,entitled “Packaged Semiconductor Devices, Methods of PackagingSemiconductor Devices, and PoP Devices,” which is a continuationapplication of U.S. patent application Ser. No. 13/890,162, filed on May8, 2013, entitled “Packaged Semiconductor Devices, Methods of PackagingSemiconductor Devices, and PoP Devices,” which claims the benefit ofU.S. Provisional Application No. 61/794,882 filed on Mar. 15, 2013,entitled, “Packaging Devices and Methods of Manufacture Thereof,” whichapplications are incorporated herein by reference in their entirety.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment, as examples. Semiconductor devices are typicallyfabricated by sequentially depositing insulating or dielectric layers,conductive layers, and semiconductive layers of material over asemiconductor substrate, and patterning the various material layersusing lithography to form circuit components and elements thereon.Dozens or hundreds of integrated circuits are typically manufactured ona single semiconductor wafer. The individual dies are singulated bysawing the integrated circuits along a scribe line. The individual diesare then packaged separately, in multi-chip modules, in other types ofpackaging, or mounted directly on circuit boards or other surfaces inend applications, as examples.

The semiconductor industry continues to improve the integration densityof various electronic components (e.g., transistors, diodes, resistors,capacitors, etc.) by continual reductions in minimum feature size, whichallow more components to be integrated into a given area. These smallerelectronic components also require smaller packages that utilize lessarea than packages of the past, in some applications. Three dimensionalintegrated circuits (3DICs) and package-on-package (PoP) devices aresome recent packaging designs in which multiple dies are stackedvertically in a package.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present embodiments, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 shows a cross-sectional view of a portion of a packagedsemiconductor device in accordance with some embodiments of the presentdisclosure;

FIG. 2 illustrates a cross-sectional view of a packaged semiconductordevice in accordance with some embodiments;

FIGS. 3, 4, and 5 show cross-sectional views of a portion of a packagedsemiconductor device in accordance with some embodiments of the presentdisclosure;

FIGS. 6 through 24 illustrate cross-sectional views of a process flowfor packaging semiconductor devices at various stages in accordance withsome embodiments;

FIG. 25 is a cross-sectional view of a packaged semiconductor devicedescribed herein packaged with another packaged semiconductor device ina 3DIC configuration; and

FIG. 26 is a flow chart of a method of packaging a semiconductor devicein accordance with some embodiments.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the present embodiments are discussed in detailbelow. It should be appreciated, however, that the present disclosureprovides many applicable inventive concepts that can be embodied in awide variety of specific contexts. The specific embodiments discussedare merely illustrative of specific ways to make and use the disclosedsubject matter, and do not limit the scope of the different embodiments.

Embodiments of the present disclosure comprise novel methods andstructures for packaging semiconductor devices. Illustrative embodimentsdescribed herein provide novel low-cost methods of forming 3DICthrough-package via (TPV) interconnect structures. The packages includea redistribution layer (RDL) that has a minimal number of insulatingmaterial layers that are thin, which provides a cost savings anddecreases or eliminates warping.

FIG. 1 shows a cross-sectional view of a portion of a packagedsemiconductor device 100 in accordance with some embodiments of thepresent disclosure. The packaged semiconductor device 100 includes asemiconductor device 130 that is packaged in accordance with embodimentsof the present disclosure. A plurality of semiconductor devices 130 isfirst manufactured on a semiconductor wafer. The semiconductor devices130 include contact pads 104 disposed on a surface thereof, apassivation layer 106, and a polymer layer 108, to be described furtherherein. The semiconductor devices 130 are singulated and thenindividually packaged within a molding material 114 that includes aplurality of through-package vias (TPVs) 112 formed therein that providevertical electrical connections for the package. The packagedsemiconductor device 100 includes an RDL 120 that includes wiring 122 athat is coupled to the contact pads 104 of the semiconductor device 102through openings 131 in the passivation layer 106 and polymer layer 108and wiring 122 b that is electrically coupled between wiring 122 a andan under-bump metallization structure 122 c which provides a mountingregion for a conductive material 126. Wiring 122 a is also referred toherein as a first portion 122 a of the RDL 120, and wiring 122 b is alsoreferred to herein as a second portion of the RDL 120. The RDL 120provides horizontal electrical connections for the package. Novelpackaging methods for the packaged semiconductor device 100 inaccordance with embodiments of the present disclosure will be describedfurther hereon.

The semiconductor device 130 includes a substrate 102. The substrate 102may comprise silicon, other types of bulk semiconductor material, orother materials, as examples. The substrate 102 may include one or moreICs formed thereon, not shown. The IC(s) may contain active and passivedevices, conductive layers, and dielectric layers according to theelectrical design of the IC(s), as examples. The substrate 102 comprisesa portion of a semiconductor wafer after a plurality of ICs has beenfabricated on the semiconductor wafer and singulated, for example.

A plurality of contact pads 104 are formed over the substrate 102. Onlyone contact pad 104 is shown in FIG. 1; however, a plurality of contactpads 104 are formed on a surface of the substrate 102 (see FIG. 2). Thecontact pads 104 are electrically coupled to elements or portions ofwiring (not shown) within the substrate 102 and provide electricalconnections to the exterior of the substrate 102. The contact pads 104are formed from a conductive layer deposited over the substrate 102using a deposition and patterning process. The contact pads 104 maycomprise aluminum (Al), copper (Cu), tin (Sn), nickel (Ni), gold (Au),silver (Ag), other electrically conductive materials, or multiple layersor combinations thereof, as examples. The contact pads 104 may be formedusing physical vapor deposition (PVD), chemical vapor deposition (CVD),an electrolytic plating process, or an electro-less plating process, asexamples. The contact pads 104 may be of the same size or of differentsizes.

A passivation layer 106 is formed over the surface of the substrate 102and over the top surface of the contact pad 104 for structural supportand physical isolation. The passivation layer 106 comprises siliconnitride (SiN), silicon dioxide (SiO₂), silicon oxynitride (SiON),polyimide (PI), benzocyclobutene (BCB), polybenzoxazole (PBO), otherinsulating materials, or combinations or multiple layers thereof, asexamples. The passivation layer 106 has a thickness of about 0.1 μm toabout 6 μm and is substantially conformal to the topography of the topsurface of the substrate 102 and the contact pads 104 in someembodiments. Alternatively, the passivation layer 106 may comprise othermaterials and dimensions. The passivation layer 106 is not included insome embodiments.

An opening in the passivation layer 106 is made by removing a portion ofpassivation layer 106 using a mask-defined photoresist etching processto expose a portion of the contact pad 104, while leaving anotherportion of the contact pad 104 covered, in some embodiments. Openingsare formed in the passivation layer 106 over each of the contact pads104, for example. In other embodiments, openings are not formed in thepassivation layer 106 over the contact pads 104. In some embodiments,openings are formed in the passivation layer 106 simultaneously with theformation of openings in a subsequently deposited polymer layer 108, tobe described further herein. In embodiments wherein openings are formedin the passivation layer 106 using a lithography process before thepolymer layer 108 is deposited, the openings in the passivation layer106 may have substantially smooth sidewalls, for example.

A polymer layer 108 is formed on the passivation layer 106, followingthe contour of the passivation layer 106 and filling a part of theopening of the passivation layer 106 over the contact pad 104, if anopening is included in the passivation layer 106. The polymer layer 108may be formed of a polymer, such as an epoxy, PI, BCB, PBO, and thelike, although other relatively soft, often organic, dielectricmaterials may also be used for the polymer layer 108. Spin coating, tapelaminating, or other commonly used formation methods may be used toapply the polymer layer 108. The thickness of the polymer layer 108 maybe between about 5 μm and about 30 μm, for example. Alternatively, thepolymer layer 108 may comprise other dimensions. The polymer layer 108and the passivation layer 106 are referred to herein collectively as aninsulating material 106/108, e.g., in some of the claims.

In accordance with some embodiments of the present disclosure, thepolymer layer 108 and the passivation layer 106 are not patterned priorto singulating the semiconductor devices 130. The singulatedsemiconductor devices 130 are packaged by forming the TPVs 112 over acarrier (not shown in FIG. 1; see carrier 150 in FIG. 10, to bedescribed further herein), and the semiconductor device 130 is thenattached to the carrier 150 by an adhesive 110, which is shown inFIG. 1. Adhesive 110 comprises a die attach film (DAF) in someembodiments, for example.

The TPVs 112 include a seed layer 116 comprising Cu, a Cu alloy, abi-layer of Ti/Cu, or other conductive materials, and a conductivematerial 118 comprising Cu, a Cu alloy, or other conductive materialsplated or formed over the seed layer 116, in some embodiments. The TPVs112 comprise a thickness or height (e.g., in a vertical direction inFIG. 1) of about 0.05 μm to about 2 μm and a width (e.g., in ahorizontal direction in FIG. 1) comprising a critical dimension (CD) ofthe packaged semiconductor device 100, for example. The CD may compriseabout 20 μm to about 300 μm in some embodiments, for example.Alternatively, the TPVs 112 and CD may comprise other materials anddimensions.

A molding material 114 is formed over the TPVs 112 and the semiconductordevice 130. The molding material 114 comprises a molding compoundcomprised of an insulating material, such as an epoxy, a fillermaterial, a stress release agent (SRA), an adhesion promoter, othermaterials, or combinations thereof, as examples. The molding material114 is removed from over the top surface of the polymer layer 108 usinga chemical-mechanical polishing (CMP) process, a grinding process, anetch process, other methods, or a combination thereof, as examples. Atop portion of the TPVs 112 may also be removed in some embodiments,reducing their height or thickness.

Openings 131 are then formed in the polymer layer 108 over each of thecontact pads 104. The openings 131 are also formed in the passivationlayer 106 in some embodiments. In some embodiments, the openings 131 areformed in the polymer layer 108 or the polymer layer 108 and passivationlayer 106 using a laser drilling process. The laser drilling processcreates a jagged or rough profile, e.g., of sidewalls of the openings131 in the polymer layer 108 or the polymer layer 108 and passivationlayer 106.

The RDL 120 is then formed over the molding material 114, the TPVs 112,and the patterned polymer layer 108 or patterned polymer layer 108 andpassivation layer 106. A portion of the RDL 120 is formed within theopenings 131 in the polymer layer 108 or the polymer layer 108 and thepassivation layer 106. Advantageously, a conductive plug is not requiredto be formed within the polymer layer 108 or the polymer layer 108 andpassivation layer 106, which results in a time and cost savings, andfurther results in a fewer number of passivation, polymer, and otherinsulating layers for the packaged semiconductor device 100.

The RDL 120 includes a first portion 122 a and a second portion 122 bcoupled to the first portion 122 a. The first portion 122 a compriseswiring that is formed over a portion of the top surface of the polymerlayer 108 and within the opening 131 in the polymer layer 108 or thepolymer layer 108 and passivation layer 106. The first portion 122 aincludes a via portion 123 a that is disposed within the polymer layer108 and passivation layer 106. The sidewalls of the via portion 123 aconform to the topography of the sidewalls of the opening 131, and thus,the via portion 123 a may comprise jagged or rough sidewalls due to thelaser drilling process used to form the opening 131.

An insulating material 124 a is formed over the first portion 122 a ofthe RDL 120, the TPVs 112, and over exposed portions of the moldingmaterial 114 and polymer layer 108. The insulating material 124 acomprises a similar material described for the polymer layer 108 in someembodiments, for example. Insulating material 124 a comprises athickness of about 1 μm to about 20 μm, for example. Alternatively, theinsulating material 124 a may alternatively comprise other materials anddimensions.

Insulating material 124 a is patterned to form openings over portions ofthe first portion 122 a of the RDL 120, and the second portion 122 b ofthe RDL 120 is formed over the insulating material 124 a and exposedportions of the first portion 122 a of the RDL 120. The second portion122 b of the RDL 120 includes via portions 123 b that extend within theopenings in insulating material 124 a and contact the top surface of aportion of the first portion 122 a of the RDL 120. An insulatingmaterial 124 b comprising similar materials and dimensions described forthe insulating material 124 a is formed over the second portion 122 b ofthe RDL 120 and exposed portions of insulating material 124 a.Insulating material 124 b is patterned to form openings over portions ofthe second portion 122 b of the RDL 120, and the UBM structure 122 c isformed over the openings in insulating material 124 b and over topportions of insulating material 124 b. A portion of the UBM structure122 c contacts a top surface of a portion of the second portion 122 b ofthe RDL 120.

The first portion 122 a and second portion 122 b of the RDL 120 and theUBM structure 122 c comprise wiring comprised of a conductive materialsuch as a metal having a thickness of about 2 μm to about 10 μm in someembodiments, as examples. The first portion 122 a and second portion 122b of the RDL 120 and the UBM structure 122 c may comprise a metal suchas Ti, Al, Ni, nickel vanadium (NiV), Cu, or combinations or multiplelayers thereof, as examples. The first portion 122 a and second portion122 b of the RDL 120 and the UBM structure 122 c may be formed usingelectrolytic plating, electro-less plating, sputtering, chemical vapordeposition methods, and/or photolithography processes, for example. Thefirst portion 122 a and second portion 122 b of the RDL 120 and the UBMstructure 122 c may comprise a single layer or multiple layers. Thefirst portion 122 a and second portion 122 b of the RDL 120 and the UBMstructure 122 c may include an adhesion layer of Ti, TiW, Cr, or othermaterials and/or a seed layer comprising about 0.05 μm to about 2 μm ofCu, a Cu alloy, a bi-layer of Ti/Cu, or other conductive materials, forexample. Alternatively, the first portion 122 a and second portion 122 bof the RDL 120 and the UBM structure 122 c may comprise other materialsand dimensions, and may be formed using other methods.

A conductive material 126 is formed over the UBM structure 122 c. TheUBM structure 122 c is used to electrically connect the conductivematerial 124 to the contact pad 104 by way of the first portion 122 aand second portion 122 b of the RDL 120. The conductive material 126 mayhave a larger diameter or diameter or width than the diameter or widthof the UBM structure 122 c. The conductive material 126 comprises aeutectic material and may comprise a conductive bump or a conductiveball. In some embodiments, the conductive material 126 comprises asolder bump or a solder ball, as examples. The use of the word “solder”herein includes both lead-based and lead-free solders, such as Pb—Sncompositions for lead-based solder; lead-free solders including InSb;tin, silver, and copper (“SAC”) compositions; and other eutecticmaterials that have a common melting point and form conductive solderconnections in electrical applications. For lead-free solder, SACsolders of varying compositions may be used, such as SAC 105 (Sn 98.5%,Ag 1.0%, Cu 0.5%), SAC 305, SAC 405, or a solder including a minorelement such as Ni or Bi with about 0.5 percent in weight (wt %), asexamples. Lead-free conductive materials 126 such as solder balls may beformed from SnCu compounds as well, without the use of silver (Ag).Alternatively, lead-free solder connectors may include tin and silver,Sn—Ag, without the use of copper. The conductive material 126 may be oneamong an array of the conductive materials 126 formed as a grid,referred to as a “ball grid array” or “BGA”. The conductive materials126 may alternatively be arranged in other shapes.

The conductive material 126 comprises a conductive ball having a shapeof a partial sphere in some embodiments. Alternatively, the conductivematerial 126 may comprise other shapes. The conductive material 126 mayalso comprise non-spherical conductive connectors, for example. Theconductive material 126 is attached in some embodiments using a solderball drop process. During the conductive material 126 mounting process,or after the conductive material mounting process, the eutectic materialof the conductive material 126 may be re-flowed in some embodiments. Theconductive material 126 is also referred to herein, e.g., in some of theclaims, as a plurality of portions of a conductive material that arecoupled to the UBM structure 122 c.

The novel packaging methods described herein advantageously require adecreased number of insulating materials, such as insulating materials124 a and 124 b. For example, a requirement of an additional insulatingmaterial between polymer layer 108 and insulating material 124 a isavoided, because via portions 123 a are formed within the polymer layer108 rather than within an additional insulating material between polymerlayer 108 and insulating material 124 a. Furthermore, in someembodiments, the RDL 120 does not include the second portion 122 b orinsulating material 124 b. The conductive material 126 can be formedwithin openings formed in insulating material 124 a and over the topsurface of a portion of insulating material 124 a in some embodiments,further reducing the number of insulating materials and wiring layers ofthe RDL 120.

In some embodiments, polymer layer 108 comprises a polymer-1 a level,insulating material 124 a comprises a polymer-2 level, and insulatingmaterial 124 b comprises a polymer-3 level, for example. A conductivebump is not formed within the polymer-1 a level in accordance with someembodiments. Rather, the opening 131 is formed in the polymer-1 a levelusing a laser drill, so that first portion 122 a of the RDL 120comprises a via portion 123 a. The opening 131 is formed in thepolymer-1 a level over a contact pad 104 comprising an aluminum (Al pad)which is formed over a silicon substrate 102 in some embodiments.

The first portion 122 a of the RDL 120 comprises an RDL1 level, and thesecond portion 122 b of the RDL 120 comprises an RDL2 level, in someembodiments. The RDL1 level is formed over a portion of the polymer-1 alevel and lines the opening 131 in the polymer-1 a level. The RDL2 levelis formed over the polymer-2 level and makes electrical contact with aportion of the RDL1 level. The polymer-3 level is formed over the RDL2level and the polymer-2 level. The polymer-3 level is patterned, and theUBM structure 122 c is formed over a portion of the polymer-3 level.

FIG. 2 illustrates a cross-sectional view of a packaged semiconductordevice 100 in accordance with some embodiments. The view shown in FIG. 2is inverted with respect to the view shown in FIG. 1. For example,conductive material 126 is formed over the RDL 120 on the bottom surfaceof the packaged semiconductor device 100. Some of the elements shown inFIG. 1 are not shown or labeled in FIG. 2, such as the UBM structure 122c. The RDL 120 includes first portions 122 a and second portions 122 bthat are formed within polymer layer 108 and insulating materials 124 aand 124 b shown in FIG. 1.

Two semiconductor devices 130 are shown in FIG. 2; however, a pluralityof semiconductor devices 130 (e.g., two or more semiconductor devices130) can be packaged together in a single package in accordance withsome embodiments. Alternatively, the semiconductor devices 130 can laterbe singulated along scribe lines 136 to form individually packagedsemiconductor devices 100.

FIG. 2 also illustrates an insulating material 132 disposed on anopposite side of the semiconductor devices 130 from the RDL 120.Openings 134 are formed in the insulating material 132 in someembodiments over each of the TPVs 112, to allow electrical connectionsto be made to the other side of the packaged semiconductor devices 100,to be described further herein. The openings 134 can be made using alaser drill or a lithography process. Insulating material 132 is notincluded in the packaged semiconductor devices 100 in some embodiments.FIG. 2 also indicates a portion thereof that is shown in FIG. 1 in moredetail.

FIGS. 3, 4, and 5 show cross-sectional views of a portion of a packagedsemiconductor device 100 in accordance with some embodiments of thepresent disclosure. FIG. 3 illustrates some heights and relativedimensions of various elements in accordance with some embodiments. Theinsulating material 106/108 (e.g., the polymer layer 108) comprises atop surface 125 having a first height h₁, and the molding material 114comprises a top surface having a second height h₂. The second height h₂is substantially the same as the first height h₁ in some embodiments. Aportion of the RDL 120 (e.g., first portion 122 a) comprises wiringhaving a bottom surface that is coupled to the top surface 125 of theinsulating material 106/108 having the first height h₁. The firstportion 122 a comprises an RDL1 level with a bottom height h₁ that issubstantially equal to the grinded molding material 114 top height h₂ insome embodiments, for example.

In some embodiments, the RDL 120 includes a via portion 123 a (e.g., viaportion 123 a of the first portion 122 a of the RDL 120) coupled to atop surface of the contact pad 104, also illustrated in FIG. 3. A bottomsurface of the via portion 123 a comprises a third height h₃, the thirdheight h₃ being less than the second height h₂ of the molding material114. The first portion 122 a comprises an RDL1 level having a viaportion 123 a height h₃ that is less than the grinded molding material114 top height h₂ in some embodiments, for example. The polymer layer108 comprises a polymer-1 a level has a continuous profile and criticaldimension (CD) from passivation in some embodiments, for example.

FIG. 4 illustrates a cross-sectional view of some embodiments whereinthe opening in the polymer layer 108 comprises a first width comprisingdimension d₁, and the opening in the passivation layer 106 comprises asecond width comprising dimension d₂. The second width comprisingdimension d₂ is greater than the first width comprising dimension d₁ insome embodiments. Dimension d₁ may comprise about 5 μm to about 40 μm,and dimension d₂ may comprise about 15 μm to about 40 μm, as examples.Alternatively, dimensions d₁ and d₂ may comprise other values.

The opening 131 in the polymer layer 108 having a dimension d₁ is alsoreferred to herein as a first opening or a top opening in the polymerlayer 108, and the opening in the passivation layer 106 having dimensiond₂ is also referred to herein as a second opening or a bottom opening inthe passivation layer 106 (e.g., in some of the claims). During themanufacturing process for the semiconductor device 130, the passivationlayer 106 may be patterned to form a plurality of second openings in thepassivation layer 106 over the contact pads 104. Each of the pluralityof second openings in the passivation layer 106 is disposed over one ofthe plurality of contact pads 104. Forming the plurality of firstopenings 131 in the polymer layer 108 comprises forming each of theplurality of first openings 131 in the polymer layer 108 within one ofthe second openings in the passivation layer 106, in some embodiments,resulting in dimension d₂ being greater than dimension d₁. The firstopenings 131 in the polymer layer 108 may be formed using laser drillingand may comprise a jagged profile or rough profile, and the largersecond openings in the passivation layer 106 may be formed usinglithography and may comprise a substantially smooth profile in someembodiments, for example. The polymer layer 108 comprises a polymer-1 alevel having a CD open on a contact pad 104 that is less than thepassivation layer 106 CD open on the contact pad 104 in someembodiments, for example.

FIG. 5 illustrates some embodiments wherein each of the plurality ofopenings 131 in the insulating material 106/108 comprises substantiallya same width within the passivation layer 106 and the polymer layer 108.Dimension d₁ is substantially the same as dimension d₂ in theseembodiments, for example. The passivation layer 106 may be patterned toform second openings over the contact pads 104 before the polymer layer108 is deposited, or alternatively, the passivation layer 106 may not bepatterned. A portion of the passivation layer 106 may be removed whenforming the openings 131, or alternatively, a portion of the passivationlayer 106 may not be removed with forming the openings 131, for example.The first openings 131 in the polymer layer 108 and the second openingsin the passivation layer 106 may both be formed using laser drilling andmay comprise a jagged profile or rough profile in some embodiments, forexample. The polymer layer 108 comprises a polymer-1 a level having a CDopen on a contact pad 104 that is substantially equal to the passivationlayer 106 CD open on the contact pad 104 in some embodiments, forexample.

FIGS. 6 through 24 illustrate cross-sectional views of a process flowfor packaging a semiconductor device 130 at various stages in accordancewith some embodiments. FIGS. 6 through 9 illustrate processing stepsthat may be used to prepare semiconductor devices 130 for packaging. InFIG. 6, a wafer comprising a plurality of the substrates 102 shown inFIG. 1 is provided that includes contact pads 104, passivation layer106, and polymer layer 108 formed thereon. The polymer layer 108 has athickness of about 1 μm to about 30 μm after being applied, in someembodiments. After the polymer layer 108 is applied, the opposite sideof the wafer is thinned, and the substrate 102 is attached to a tape 138that is supported by a frame 140, or other type of carrier device, asshown in FIG. 7. The semiconductor devices 130 are singulated by sawingthe substrate 102 and materials formed thereon along scribe lines 142,as shown in FIG. 8, forming individual semiconductor devices 130, asshown in FIG. 9. An adhesive 110 is applied to the thinned side of thesubstrate 102 before attaching the semiconductor devices 130 to acarrier 150 (see FIG. 16, to be described further herein).

FIGS. 10 through 24 illustrate various steps of a packaging process flowfor semiconductor devices 130 in accordance with some embodiments. InFIG. 10, a carrier 150 comprising a carrier wafer is provided. Thecarrier 150 may comprise glass, a semiconductor material, or othermaterials. An adhesive 152 is coupled to the carrier 150. The adhesive152 may comprise a glue, tape, or other materials with adhesiveproperties. An insulating material 132 is formed over the adhesive 152.The insulating material 132 may comprise similar materials anddimensions as described for polymer layer 108, for example. In someembodiments, the insulating material 132 comprises PBO, PI, a solderresist (SR), or a combination or multiple layers thereof, for example.Alternatively, insulating material 132 may comprise other materials.Layers 152 and 132 comprise a glue/polymer base buffer layer in someembodiments, for example.

A seed layer 116 is formed over the insulating material 132, as shown inFIG. 11. The seed layer 116 may be formed by physical vapor deposition(PVD) or other methods, for example. The seed layer 116 functions as anunder-bump metallization (UBM) layer in some embodiments, for example.For example, the seed layer 116 functions as a UBM layer in FIG. 25,wherein a conductive material 179 that may comprise a plurality ofsolder bumps or solder balls is coupled to the TPVs 112, to be describedfurther herein.

A layer of photoresist 154 is formed over the seed layer 116, as shownin FIG. 12. The layer of photoresist 154 is patterned usingphotolithography with a pattern for a plurality of TPVs, exposing firstportions of the seed layer 116, also shown in FIG. 12. A plating processis used to form a conductive material 118 over the exposed firstportions of the seed layer 116, as shown in FIG. 13. The layer ofphotoresist 154 is then stripped or removed, exposing second portions ofthe seed layer 116, as shown in FIG. 14. The exposed second portions ofthe seed layer 116 are then removed using an etching process or otherprocess, as shown in FIG. 15, leaving a plurality of the TPVs 112 formedacross the surface of the carrier 150. The TPVs 112 may comprise a widthof about 20 μm to about 300 μm in a top view, and may comprise acircular, oval, square, rectangular, or polygon shape in the top view,as examples. Alternatively, the TPVs 112 may comprise other shapes anddimensions.

A plurality of the semiconductor devices 130 including the adhesive 110formed thereon is placed onto the carrier 150, as shown in FIG. 16. Thesemiconductor devices 130 are attached to the insulating material 132disposed over the carrier 150 manually, using a pick-and-place machine,or other methods, as examples. A molding material 114 is formed over theTPVs 112, semiconductor devices 130, and exposed portions of theinsulating material 132, as shown in FIG. 17. A top surface of themolding compound 114 is removed to expose a top surface of the polymerlayer 108 and a top surface of the TPVs 112, as shown in FIG. 18.Openings 131 are formed in the polymer layer 108 using a laser drillingprocess, also shown in FIG. 18 and as previously described for FIG. 1.

The packaging process is then continued to form the RDL 120 and form theconductive material 126 over the RDL 120, as shown in FIGS. 19 and 20and as previously described herein. The packaged semiconductor device iselectrically tested at this point in the packaging process, in someembodiments.

The packaged semiconductor device is debonded from the carrier 150, andthe conductive material 126 is attached to a tape 162 supported by aframe 160 or other carrier, as illustrated in FIG. 21. Openings 134 areformed in insulating material 132 using a laser drilling orphotolithography process, as shown in FIG. 22. Sidewalls of the openings134 in the insulating material 132 comprise a jagged or rough profile inembodiments wherein a laser drilling process is used to form theopenings 134. Sidewalls of the openings 134 in the insulating material132 comprise a substantially smooth profile in embodiments wherein aphotolithography process is used to form the openings 134. The openings134 are formed in the insulating material 132 before singulating theplurality of semiconductor devices 130 to form packaged semiconductordevices 100 in some embodiments.

In some embodiments, the material of the TPVs 112 is then recessed (notshown). The TPVs 112 may be recessed using an etch process by about 0.1μm to about 5 μm, for example. Alternatively, the TPVs 112 may berecessed by other amounts. In other embodiments, the TPVs 112 are notrecessed.

The packaged semiconductor devices are then singulated along scribelines 136, as shown in FIG. 22, and the packaged semiconductor devices100 are removed from the tape 162 to form individual packagedsemiconductor devices 100, shown in FIG. 23. In some embodiments, asolder paste 164 is formed over a surface of each of the TPVs 112, asillustrated in FIG. 24. In other embodiments, a solder paste 164 is notapplied.

In accordance with some embodiments of the present disclosure, thepackaged semiconductor device 100 includes a semiconductor device 102including an RDL 120 disposed on a first side 166 a and an insulatingmaterial 132 disposed on a second side 166 b, shown in FIG. 24. The TPVs112 extend vertically through the package. The packaged semiconductordevice 100 includes a novel integrated fan out (InFO) interconnectscheme.

FIG. 25 is a cross-sectional view of a packaged semiconductor device 100described herein packaged with another packaged semiconductor device 170in a 3DIC configuration comprising a package-on-package (PoP) device180. The packaged semiconductor device 100 is also referred to herein asa first packaged semiconductor device, and the packaged semiconductordevice 170 is also referred to herein as a second packaged semiconductordevice, e.g., in some of the claims.

To assemble the PoP device 180, the packaged semiconductor device 170 isprovided that includes one or more semiconductor devices 130 b and 130 cattached to an interposer substrate 172. The packaged semiconductordevice 170 is packaged with a semiconductor device 130 a comprising asemiconductor device 130 shown in FIG. 1 in accordance with someembodiments. The substrate 172 of the packaged semiconductor device 170comprises a silicon substrate, a silicon or glass interposer, a printedcircuit board (PCB), an organic laminate substrate, or other type ofsubstrate, as examples. The substrate 172 includes a plurality ofthrough substrate vias (TSVs) 174 disposed therein. The TSVs 174 extendfrom a first side of the substrate 172 to a second side of the substrate172. The TSVs 174 comprise a conductive material and provide verticalelectrical connections from the first side to the second side of thesubstrate 172. Bond pads 175 are coupled to one or more of the TSVs 174on the first side of the substrate 172, and contact pads 173 are coupledto one or more of the TSVs 174 on the second side of the substrate 172.

A semiconductor device 130 b is coupled to the substrate 172 in asemiconductor device mounting region of the substrate 172. Thesemiconductor device 130 b may be attached to the substrate 172 using anadhesive, tape, or other means. The semiconductor device 130 b iselectrically coupled to the bond pads 175 using wire bonds 176 b.Semiconductor device 130 c may be attached to a top surface ofsemiconductor device 130 b using an adhesive, tape, or other means. Thesemiconductor device 130 c is electrically coupled to the bond pads 175using wire bonds 176 c. In the figures, the semiconductor devices 130 band 130 c are shown coupled to the same bond pads 175 for simplicity;however, in some embodiments, the semiconductor devices 130 b and 130 care each coupled to different bond pads 175 on the substrate 172.

The packaged semiconductor device 170 may include one semiconductordevice 130 b in some embodiments, or the packaged semiconductor device170 may include two or more stacked semiconductor devices 130 b and 130c that may comprise different dimensions or the same dimensions. Thesemiconductor devices 130 b and 130 c may comprise one or moresemiconductive material layers, one or more conductive material layers,one or more dielectric material layers, or combinations thereof, asexamples. The second packaged semiconductor device 170 is coupled to anend of each of the TPVs 112 of the first packaged semiconductor device100 by a conductive material 179 comprising a material as described forconductive material 126, in some embodiments.

In some embodiments, a molding material 178 comprising a similarmaterial as described for molding material 114 is formed over the secondpackaged semiconductor device 170, e.g., over the vertically stackedsemiconductor devices 130 b and 130 c, over the wire bonds 176 b and 176c, and over exposed portions of the substrate 172. In other embodiments,a molding material 178 is not included in the PoP device 180. In someembodiments, an underfill material 182 comprising an insulating materialis disposed between the first packaged semiconductor device 100 and thesecond packaged semiconductor device 170. In other embodiments, anunderfill material 182 is not included in the PoP device 180.

In some embodiments, semiconductor device 130 a comprises a logicdevice, and semiconductor devices 130 b and 130 c comprise memorydevices, such as dynamic random access memory (DRAM) devices.Alternatively, semiconductor devices 130 a, 130 b, and 130 c maycomprise other types of devices and integrated circuits.

FIG. 26 is a flow chart 190 of a method of packaging a semiconductordevice 130 in accordance with some embodiments. In step 192, TPVs 112are formed over a carrier 150 (see also FIGS. 11 through 15), and instep 194, a semiconductor device 130 is coupled to the carrier 150 (seeFIG. 16). The semiconductor device 130 includes contact pads 104disposed on a surface thereof and an insulating material 106/108disposed over the contact pads 104 (see FIG. 1). In step 196, a moldingmaterial 114 is formed over the carrier 150 between the TPVs 112 and thesemiconductor device 130 (see FIGS. 17 and 18). In step 198, openings131 are formed in the insulating material 106/108 over the contact pads104 (see FIG. 18). The openings 131 are formed in insulating material106/108 using a laser drilling process in accordance with someembodiments. In step 199, a redistribution layer (RDL) 120 is formedover the insulating material 106/108 and the openings 131 in theinsulating material 106/108 (see FIG. 19). A portion of the RDL 120 iscoupled to a top surface of each of the contact pads 104 (see FIG. 1).

Some embodiments of the present disclosure include methods of packagingsemiconductor devices 130. Other embodiments include packagedsemiconductor devices 100 that have been packaged using the novelmethods described herein. Some embodiments of the present disclosureinclude PoP devices 180 that include the packaged semiconductor devices100 that have been packaged using the novel methods described hereinwith reference to FIG. 25.

Advantages of some embodiments of the disclosure include providing novelpackaging methods for semiconductor devices. Illustrative embodimentsdescribed herein provide novel low-cost methods of forming 3DICthrough-package via (TPV) interconnect structures. Packaging devices areprovided that have thin polymer layers within a redistribution layer(RDL), which are advantageous in that die warpage, die tilt, andover-grinding are prevented or reduced. Passivation of the thin polymerlayers (e.g., such as polymer layer 108) is not included or required inthe process flows in some embodiments. The thinness of the polymerlayers provides the ability to control die warpage in some applications.The polymer layers are more uniform than thicker polymer layers oftenused in packaging devices. The novel packaging devices and methods areparticularly advantageous when they are used to package thin integratedcircuit dies having a thickness of less than about 40 μm, for example.

In some embodiments, a via metal (e.g., first portion 122 a of the RDL120) on an integrated circuit die or semiconductor device 130 is formedby laser drilling. Conductive bumps are not formed on the die; rather, aportion of the RDL 120 is used to make electrical contact to contactpads 104 on the integrated circuit die in some embodiments. An RDLbottom height is about equal to or less than a grinded molding materialtop height in some embodiments. The thin polymer layer has a continuousprofile and opening from passivation. The laser-drilled thin polymerlayer has a more rough profile than if the thin polymer layer werepatterned using photolithography. An opening in the polymer layer over acontact pad has a width that is less than or about equal to an openingin a passivation layer over the contact pad in some embodiments, whereinthe passivation layer is disposed beneath the thin polymer layer.

Breakage or electrical opens of RDLs are reduced or eliminated byforming the via portions 123 a within a polymer layer 108 that is partof a portion 122 a of the RDL 120, advantageously, which increasesyields and reduces costs. Forming the openings 131 in the polymer layer108 by laser drilling avoids surface wetting sensitivities of polymermaterials used for the polymer layer 108 and also the molding material114, in some embodiments. Furthermore, the novel packaging methods,structures and designs are easily implementable in manufacturing andpackaging process flows. Other advantageous features will be apparent tothose skilled in the art when informed by the present disclosure.

In accordance with some embodiments of the present disclosure, a methodof packaging a semiconductor device includes forming a plurality of TPVsover a carrier, and coupling a semiconductor device to the carrier. Thesemiconductor device includes a plurality of contact pads disposed on asurface thereof and an insulating material disposed over the pluralityof contact pads. The method includes forming a molding material over thecarrier between the plurality of TPVs and the semiconductor device, andforming a plurality of openings in the insulating material using a laserdrilling process, each of the plurality of openings being disposed overone of the plurality of contact pads. The method includes forming an RDLover the insulating material and the plurality of openings in theinsulating material, wherein a portion of the RDL is coupled to a topsurface of each of the plurality of contact pads.

In accordance with other embodiments, a method of packaging asemiconductor device includes forming a plurality of TPVs over acarrier, and coupling a plurality of integrated circuit dies to thecarrier. Each of the plurality of integrated circuit dies includes aplurality of contact pads, a passivation layer disposed over a portionof the plurality of contact pads, and a polymer layer disposed over thepassivation layer. A molding material is formed over the carrier, theplurality of TPVs, and the plurality of integrated circuit dies, and themolding material is removed from over a top surface of the polymer layerof the plurality of integrated circuit dies. The method includes formingan opening in the polymer layer of the plurality of integrated circuitdies over each of the plurality of contact pads using a laser drillingprocess, and forming an RDL over the top surface of the polymer layerand the plurality of openings in the polymer layer. A portion of the RDLis coupled to a top surface of each of the plurality of contact pads.The method includes removing the carrier and singulating the pluralityof integrated circuit dies to form a plurality of packaged semiconductordevices.

In accordance with other embodiments, a packaged semiconductor deviceincludes an integrated circuit die including a first side and a secondside opposite the first side, and a plurality of contact pads disposedon the first side of the integrated circuit die. A passivation layer isdisposed over the first side of the integrated circuit die, thepassivation layer including an opening over each of the plurality ofcontact pads. A polymer layer is disposed over the passivation layer,the polymer layer including a laser drilled opening over each of theplurality of contact pads. A molding material is disposed around theintegrated circuit die, the passivation layer, and the polymer layer,wherein a surface of the molding material is substantially co-planarwith a surface of the polymer layer. A plurality of TPVs is disposedwithin the molding material, and an RDL is disposed over the moldingmaterial, the plurality of TPVs, and the polymer layer. The RDL includeswiring that is coupled to each of the plurality of contact pads throughthe laser drilled openings in the polymer layer and the openings in thepassivation layer. An insulating material is disposed over the secondside of the integrated circuit die and the molding material, wherein theinsulating material includes an opening over each of the plurality ofTPVs.

In yet another embodiment, a semiconductor device is provided. Thesemiconductor device includes an integrated circuit die including afirst side and a second side opposite the first side, a contact paddisposed on the first side of the integrated circuit die, a passivationlayer disposed over the first side of the integrated circuit die, thepassivation layer including a first opening in the passivation layerover the contact pad, a polymer layer disposed over the passivationlayer, the polymer layer including a second opening in the polymer layerover the contact pad, a molding material disposed around the integratedcircuit die, the passivation layer, and the polymer layer, wherein anupper surface of the molding material is level with an upper surface ofthe polymer layer, and a redistribution layer (RDL) disposed over themolding material and the polymer layer, wherein a conductive portion ofthe RDL extends through the second opening in the polymer layer andthrough the first opening in the passivation layer to contact thecontact pad.

In yet another embodiment, a semiconductor device is provided. Thesemiconductor device includes a first conductive feature disposed on afirst side of an integrated circuit die, a first dielectric layerdisposed over and directly contacting the first conductive feature andthe first side of the integrated circuit die, wherein the firstdielectric layer comprises a first opening and exposing the firstconductive feature, a second dielectric layer disposed over and directlycontacting the first dielectric layer, wherein the second dielectriclayer comprises a second opening over the first opening and exposing thefirst conductive feature, an encapsulant disposed around the firstconductive feature, the first dielectric layer, and the seconddielectric layer, wherein a top surface of the encapsulant does notextend past a top surface of the second dielectric layer, and a thirddielectric layer disposed over and directly contacting the seconddielectric layer and the encapsulant, the third dielectric layercomprising at least one second conductive feature, wherein one of the atleast one second conductive features extends through the first openingand the second opening to contact the first conductive feature andcontacts the second dielectric layer.

In yet another embodiment, a semiconductor device is provided. Thesemiconductor device includes a first packaged semiconductor devicehaving an integrated circuit die, a conductive pad disposed on a topsurface of the integrated circuit die, a passivation layer disposed onthe top surface of the integrated circuit die, the passivation layerincluding an opening in the passivation layer over the conductive pad,wherein the opening in the passivation layer comprises a sidewall, apolymer layer disposed on the passivation layer, the polymer layerincluding an opening in the polymer layer over the conductive pad,wherein the opening in the polymer layer comprises a sidewall, a moldingmaterial disposed around the integrated circuit die, the passivationlayer, and the polymer layer, a redistribution layer (RDL) disposed overthe molding material and the polymer layer, wherein a conductive surfaceof the RDL contacts the polymer layer and the conductive pad of theintegrated circuit die, and a plurality of through-package vias (TPVs)disposed within the molding material. The semiconductor device furtherincludes a second packaged semiconductor device electrically coupled toa first end of each of the plurality of TPVs.

Although some embodiments of the present disclosure and their advantageshave been described in detail, it should be understood that variouschanges, substitutions and alterations can be made herein withoutdeparting from the spirit and scope of the disclosure as defined by theappended claims. For example, it will be readily understood by thoseskilled in the art that many of the features, functions, processes, andmaterials described herein may be varied while remaining within thescope of the present disclosure. Moreover, the scope of the presentapplication is not intended to be limited to the particular embodimentsof the process, machine, manufacture, composition of matter, means,methods and steps described in the specification. As one of ordinaryskill in the art will readily appreciate from the disclosure of thepresent disclosure, processes, machines, manufacture, compositions ofmatter, means, methods, or steps, presently existing or later to bedeveloped, that perform substantially the same function or achievesubstantially the same result as the corresponding embodiments describedherein may be utilized according to the present disclosure. Accordingly,the appended claims are intended to include within their scope suchprocesses, machines, manufacture, compositions of matter, means,methods, or steps.

What is claimed is:
 1. A semiconductor device comprising: an integratedcircuit die including a first side and a second side opposite the firstside; a contact pad disposed on the first side of the integrated circuitdie; a passivation layer disposed over the first side of the integratedcircuit die, the passivation layer including a first opening in thepassivation layer over the contact pad; a polymer layer disposed overthe passivation layer, the polymer layer including a second opening inthe polymer layer over the contact pad; a molding material disposedaround the integrated circuit die, the passivation layer, and thepolymer layer, wherein an upper surface of the molding material is levelwith an upper surface of the polymer layer; and a redistribution layer(RDL) disposed over the molding material and the polymer layer, whereina conductive portion of the RDL extends through the second opening inthe polymer layer and through the first opening in the passivation layerto contact the contact pad.
 2. The semiconductor device of claim 1,wherein at least of the first opening or the second opening is formed bylaser drilling.
 3. The semiconductor device of claim 1, wherein the RDLis a first RDL and further comprising a second redistribution layerdisposed on and electrically connected to the first RDL.
 4. Thesemiconductor device of claim 1, comprising an under-bump metallization(UBM) structure disposed over and electrically connected to the RDL. 5.The semiconductor device of claim 1, further comprising a through via(TV) disposed within the molding material.
 6. The semiconductor deviceof claim 1, wherein a dielectric portion of the RDL is disposed on theconductive portion and wherein the dielectric portion of the RDL extendsat least partially into the second opening.
 7. A semiconductor devicecomprising: a first conductive feature disposed on a first side of anintegrated circuit die; a first dielectric layer disposed over anddirectly contacting the first conductive feature and the first side ofthe integrated circuit die, wherein the first dielectric layer comprisesa first opening and exposing the first conductive feature; a seconddielectric layer disposed over and directly contacting the firstdielectric layer, wherein the second dielectric layer comprises a secondopening over the first opening and exposing the first conductivefeature; an encapsulant disposed around the first conductive feature,the first dielectric layer, and the second dielectric layer, wherein atop surface of the encapsulant does not extend past a top surface of thesecond dielectric layer; and a third dielectric layer disposed over anddirectly contacting the second dielectric layer and the encapsulant, thethird dielectric layer comprising at least one second conductivefeature, wherein one of the at least one second conductive featuresextends through the first opening and the second opening to contact thefirst conductive feature and contacts the second dielectric layer. 8.The semiconductor device of claim 7, wherein the third dielectric layerand the at least one second conductive feature comprise a redistributionlayer (RDL).
 9. The semiconductor device of claim 7, wherein the atleast one second conductive feature contacts the top surface of thesecond dielectric layer.
 10. The semiconductor device of claim 7,wherein the first opening and the second opening have substantially asame diameter within the first dielectric layer and the seconddielectric layer.
 11. The semiconductor device of claim 7, wherein adiameter of the first opening is greater than a diameter of the secondopening.
 12. The semiconductor device of claim 7, wherein at least oneof the first opening or the second opening is formed by laser drilling.13. A semiconductor device, comprising: a first packaged semiconductordevice, comprising: an integrated circuit die; a conductive pad disposedon a top surface of the integrated circuit die; a passivation layerdisposed on the top surface of the integrated circuit die, thepassivation layer including an opening in the passivation layer over theconductive pad, wherein the opening in the passivation layer comprises asidewall; a polymer layer disposed on the passivation layer, the polymerlayer including an opening in the polymer layer over the conductive pad,wherein the opening in the polymer layer comprises a sidewall; a moldingmaterial disposed around the integrated circuit die, the passivationlayer, and the polymer layer; and a redistribution layer (RDL) disposedover the molding material and the polymer layer, wherein a conductivesurface of the RDL contacts the polymer layer and the conductive pad ofthe integrated circuit die; and a plurality of through-package vias(TPVs) disposed within the molding material; and a second packagedsemiconductor device electrically coupled to a first end of each of theplurality of TPVs.
 14. The semiconductor device of claim 13, furthercomprising an insulating material disposed over the integrated circuitdie and over the molding material, wherein the insulating materialcomprises openings that expose the first ends of each of the pluralityof TPVs.
 15. The semiconductor device of claim 14, further comprisingsolder paste over the first ends of each of the plurality of TPVs. 16.The semiconductor device of claim 13, wherein the conductive surface ofthe RDL directly contacts the sidewall of the opening in the passivationlayer.
 17. The semiconductor device of claim 13, wherein the conductivesurface of the RDL directly contacts a top surface of the polymer layer.18. The semiconductor device of claim 13, wherein a portion of thepolymer layer directly contacts a top surface of the conductive pad. 19.The semiconductor device of claim 13, wherein the sidewall of theopening in the passivation layer has a rough surface.
 20. Thesemiconductor device of claim 13, wherein at least one of the opening inthe passivation layer or the opening in the polymer layer is formed bylaser drilling.